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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2837 DESCRIPTION With TO-3PN package Complement to type 2SA1186 APPLICATIONS For audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage ANG CH MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 150 150 5 10 2 UNIT V V V A A W ae ae Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ;IB=0 IC=5A ;IB=0.5A VCB=150V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=4V IE=-1A ; VCE=12V f=1MHz;VCB=80V 50 MIN 150 2SC2837 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.0 0.1 0.1 V mA mA 70 60 MHz pF Switching times ton ts tf Turn-on time Fall time Storage time hFE Classifications O 50-100 P 70-140 CHA IN Y E SEM NG IC=5A IB1=-IB2=0.5A VCC=60V, RL=12| OND IC TOR UC 0.2 |I |I |I 1.4 0.35 s s s 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2837 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2837 CHA IN E SEM NG OND IC TOR UC 4 |
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